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MEMBER OF TECHNICAL STAFF/ PRINCIPAL ENGINEER/ STAFF ENGINEER - GAN
FAB INTEGRATION II
Job Details
Job Title
:
MEMBER OF TECHNICAL STAFF/ PRINCIPAL ENGINEER/ STAFF ENGINEER - GAN
Department
:
FAB INTEGRATION II
Closing Date
:
24-JUN-2019
Job Description
1. Experienced technology development and characterization engineer for the development of GaN power semiconductor devices and new products. 2. Projects will involve simulation, design and characterization of state of the art GaN power devices for low, medium and high voltages. 3. Close interaction with multi-teams (design, test, reliability, applications, process, and packaging) will be required. 4. Candidate must be able to effectively communicate ideas and project progress. 5. Responsibilities include, but are not limited to the following: - GaN power device design and layout (lateral & vertical). - TCAD device simulation for GaN HEMT structure. - Electrical characterization (DC & AC) of GaN devices. - Test development for GaN. - Statistical analysis and interpretation of data. - Set up GaN specific reliability tests (JEDEC and beyond). - Work with internal and external resources on device development. - Work with multi-geography project teams. - Engage with customers. 6. Tools: - JMP (or similar statistical tool) for design of experiments. - Cadence (or Mentor Graphics) for layout. - Synopsys (or similar platform) for process & device TCAD simulation. - Basic knowledge of SPICE simulation software is a plus. - Various characterization tools and test boards.
Requirements
1. PhD EE with 2+ years of experience, or MS EE with 5+ years of experience, working on GaN power device development is preferred. 2. Strong background in GaN device physics and processing, and device architecture. 3. Experience in the use of device and process simulation tools such as Synopsys (or other platform), and mask layout tools such as Cadence or Mentor. 4. Hands on experience with laboratory equipment and electrical characterization of GaN devices. 5. Understanding of silicon power device physics and competency in power device architectures, such as power MOSFETs, IGBTs, and Rectifiers is a plus. 6. Good knowledge of power conversion topologies is a plus.
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